类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24LC512T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIJ |
|
S70FL01GSDPMFI011Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 16SOIC |
|
BR93G46F-3AGTE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 3MHZ 8SOP |
|
AT25SF081-XMHD-TAdesto Technologies |
IC FLASH 8MBIT SPI 104MHZ 8TSSOP |
|
CY7C1150KV18-400BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
MT53E256M32D2DS-053 AIT:B TRMicron Technology |
IC DRAM 8GBIT 1.866GHZ 200WFBGA |
|
S912ZVML64F1MKH557Rochester Electronics |
MICROCONTROLLER 16 BIT, HCS12 CP |
|
AT24CS16-MAHM-ERoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8UDFN |
|
QS86446-20PRochester Electronics |
CACHE TAG SRAM, 64KX4, 19NS |
|
CY7C1440AV25-167BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
24LCS52T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IS43TR16128DL-107MBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
MT58L128L32D1T-10Rochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |