类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 72Mb (2M x 36) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.4 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43R32400E-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 144LFBGA |
|
CY27H010-45PCRochester Electronics |
OTP ROM, 128KX8, 45NS PDIP32 |
|
7008L15JGRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 84PLCC |
|
S29GL064S80DHIV10Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
W987D6HBGX7EWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
S25FL164K0XMFB010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
M24C08-DRMN3TP/KSTMicroelectronics |
IC EEPROM 8KBIT I2C 1MHZ 8SO |
|
24AA1026T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 400KHZ 8SOIJ |
|
GD25LD40CEIGRGigaDevice |
IC FLSH 4MBIT SPI/DUAL I/O 8USON |
|
AT25TE001-SSHN-TAdesto Technologies |
IC 1MBIT 8SOIC |
|
CY15V104QI-20LPXCCypress Semiconductor |
IC FRAM 4MBIT SPI 20MHZ 8GQFN |
|
CY14V104NA-BA25XITCypress Semiconductor |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
IS45S16400J-7CTLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |