English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GL-S |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 60ns |
| 访问时间: | 100 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT25FF081A-SHN-BAdesto Technologies |
IC FLASH 8MBIT SPI QUAD 8SOIC |
|
MX25L12845GZNI-10GMacronix |
IC FLSH 128MBIT SPI 120MHZ 8WSON |
|
AT28LV010-20TU-235Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32TSOP |
|
S25FS064SAGMFI010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
CY62147G-45ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
70V639S12BFI8Renesas Electronics America |
IC SRAM 2.25MBIT PAR 208CABGA |
|
70V659S15BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S27KL0641DABHA023Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
|
6116SA90TDBRochester Electronics |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
S34ML04G100BHA000Rochester Electronics |
IC FLASH 4GBIT PARALLEL 63BGA |
|
IS25WP128F-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
CY7C1314KV18-250BZIRochester Electronics |
QDR SRAM, 512KX36, 0.45NS PBGA16 |
|
041841QLAD-4Rochester Electronics |
256KX18 SRAM |
