English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 150 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.8 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL064S70BHA043Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
IS62WV12816EALL-55TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
CY27C010-70ZCRochester Electronics |
OTP ROM, 128KX8, 70NS PDSO32 |
|
SST38VF6403-90-5I-B3KERoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
S25FS512SAGBHI213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
CY62128EV30LL-45SXARochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOIC |
|
CAT28LV256G-25TRochester Electronics |
IC EEPROM 256KBIT PAR 32PLCC |
|
IS43R83200F-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
CY7C1362A-225BGCRochester Electronics |
CACHE SRAM, 512KX18, 2.5NS |
|
IS43R16320E-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
FM25C160B-GTRCypress Semiconductor |
IC FRAM 16KBIT SPI 20MHZ 8SOIC |
|
W631GU8MB15I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |
|
R1RP0416DSB-2LR#D0Rochester Electronics |
STANDARD SRAM, 256KX16, 12NS |
