类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 8 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EM68A16CBQC-25HEtron Technology |
IC DRAM 256MBIT PARALLEL 84FBGA |
|
CY62167GE30-45BV1XITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
SST26VF032B-104I/SMRoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8SOIJ |
|
BR93G46FV-3BGTE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 3MHZ 8SSOPB |
|
IS42S16400J-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
W987D6HBGX6E TRWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
71V3559S80BQIRochester Electronics |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS61C6416AL-12KLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
S25FL128SDPMFV003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
DS2502P-E64Rochester Electronics |
IC EPROM 1KBIT 1-WIRE 6TSOC |
|
25AA080T/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 1MHZ 8SOIC |
|
S25FL127SABBHVC00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
AS4C8M16D1-5BINAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 60TFBGA |