类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM |
内存大小: | 32Mb (2M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA |
供应商设备包: | 48-TFBGA (7.5x8.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA160CT-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
24LC025T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
25C040T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8SOIC |
|
AS4C32M8SA-6TINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
S29AL016J70TFI010Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
CY7C1020CV33-10ZCTRochester Electronics |
STANDARD SRAM, 32KX16 |
|
R1LP5256ESA-5SI#S0Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
S29GL128N90TFAR20Rochester Electronics |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
M95512-DRDW3TP/KSTMicroelectronics |
IC EEPROM 512KBIT SPI 8TSSOP |
|
S29PL127J70BFI000Flip Electronics |
IC FLASH 128MBIT PARALLEL 80FBGA |
|
FT24C04A-KNR-TFremont Micro Devices |
IC EEPROM 4KBIT I2C 1MHZ 8UDFN |
|
MX29F200CBTI-70GMacronix |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
AM27C512-200JIRochester Electronics |
OTP ROM, 64KX8, 200NS, CMOS, PQC |