类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 8 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT25160YI-GRochester Electronics |
IC EEPROM 16KBIT SPI 8TSSOP |
|
CY7C187-15VXCRochester Electronics |
STANDARD SRAM, 64KX1, 15NS |
|
FM27C010Q90Rochester Electronics |
IC EPROM 1MBIT PARALLEL 32CDIP |
|
TH58BYG2S3HBAI6Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 67VFBGA |
|
SM671PEE ADS TU115Silicon Motion |
FERRI-UFS 256GB 3D TLC + EXT. TE |
|
CY7C1366C-166AXCCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
71V424L10PHGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
24LC65-I/SMRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIJ |
|
CY14B101KA-ZS25XIRochester Electronics |
IC NVSRAM 1MBIT PAR 44TSOP II |
|
IS43LR16320B-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
CY7C024E-25AXIFlip Electronics |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
W29N01HVDINFWinbond Electronics Corporation |
IC FLASH 1GBIT PARALLEL 48VFBGA |
|
BR25L640FJ-WE2ROHM Semiconductor |
IC EEPROM 64KBIT SPI 5MHZ 8SOPJ |