类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT58L512L18PF-7.5Rochester Electronics |
IC SRAM 8MBIT PARALLEL 165FBGA |
|
AS7C256B-15PINAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28DIP |
|
GS881Z36CGD-300IGSI Technology |
IC SRAM 9MBIT PARALLEL 165FPBGA |
|
CY62167G30-45ZXATCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
93C46B-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
IS46R16160D-5BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
6116SA45TPIRochester Electronics |
SRAM 16K (2K X 8-BIT) |
|
S25FL256SDSMFV010Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
CY7C0241E-15AXIRochester Electronics |
DUAL-PORT SRAM, 4KX18, 15NS, CMO |
|
DS1249AB-70Rochester Electronics |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
CY7C1019B-12ZXCTRochester Electronics |
STANDARD SRAM, 128KX8 |
|
GVT71256E18T-7Rochester Electronics |
STANDARD SRAM, 256KX18 |
|
CY7C028V-20AXIRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |