English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR IV |
| 内存大小: | 144Mb (8M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 600 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.26V ~ 1.34V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 361-BBGA, FCBGA |
| 供应商设备包: | 361-FCBGA (21x21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TMS55161-70DGHRochester Electronics |
VIDEO DRAM, 256KX16, 70NS PDSO64 |
|
BR93G86F-3GTE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 3MHZ 8SOP |
|
93AA66CT-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8TSSOP |
|
71V3556SA100BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
93C56CT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8SOIC |
|
24FC04T-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
BR25G128F-3GE2ROHM Semiconductor |
IC EEPROM 128KBIT SPI 20MHZ 8SOP |
|
CY14B101LA-SZ25XITCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 32SOIC |
|
71321LA25JGI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
25LC160BT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8MSOP |
|
MT55L256V18P1T-7.5TRRochester Electronics |
SRAM 3.3V 4M-BIT 256KX18 4.2NS |
|
CY62177EV30LL-55BAXICypress Semiconductor |
IC SRAM 32MBIT PARALLEL 48FBGA |
|
CY62128DV30LL-55ZXITRochester Electronics |
STANDARD SRAM, 128KX8 |
