English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 8Mb (1M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY62136VLL-70ZSXETRochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
CY7C1423KV18-300BZXCRochester Electronics |
DDR SRAM, 2MX18, 0.45NS PBGA165 |
|
043641WKAB-5Rochester Electronics |
256KX18 SRAM |
|
34AA04-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
M95640-DFDW6TPSTMicroelectronics |
IC EEPROM 64KBIT SPI 8TSSOP |
|
AT24C02C-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
IS43R83200D-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
CAT25010S-TE13Rochester Electronics |
IC EEPROM 1KBIT SPI 10MHZ 8SOIC |
|
CY7C2564XV18-450BZXCCypress Semiconductor |
NO WARRANTY |
|
71T75602S150BGGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
7164S25YGRochester Electronics |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
CY62167GE-45ZXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
IS61LPS51236B-200B3LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
