类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | 933 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1512-35SCRochester Electronics |
STANDARD SRAM, 64KX8, 35NS |
|
71V67703S75BQRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
S-93C56BD0I-J8T1UABLIC U.S.A. Inc. |
IC EEPROM 2KBIT SPI 2MHZ 8SOP |
|
MX30UF2G28AB-XKIMacronix |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
71V3576YS133PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
NM24C08UM8XRochester Electronics |
IC EEPROM 8KBIT I2C 100KHZ 8SOIC |
|
IS42RM32400H-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
AT27LV040A-90JURoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32PLCC |
|
CY7C1512V18-250BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CAV24C128YE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 128KBIT I2C 8TSSOP |
|
71V124SA10YG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS25LQ512B-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512KBIT SPI/QUAD 8SOIC |
|
MR0DL08BMA45REverspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 48FBGA |