English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 512Kb (32K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-BSOJ (0.400", 10.16mm Width) |
| 供应商设备包: | 44-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS25WP032D-RMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 16SOIC |
|
NM93C56AENRochester Electronics |
EEPROM, 128X16, SERIAL PDIP8 |
|
IS61WV6416EEBLL-10BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 48TFBGA |
|
SST39SF040-70-4C-NHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
AS4C1M16S-6TCNTRAlliance Memory, Inc. |
IC DRAM 16MBIT PAR 50TSOP II |
|
S29GL256P11TFI010Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
SST25VF016B-50-4I-QAFRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 50MHZ 8WSON |
|
MB85RC128APNF-G-JNERE1Fujitsu Electronics America, Inc. |
IC FRAM 128KBIT I2C 1MHZ 8SOP |
|
CAT93C86V-TE13Rochester Electronics |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
NDD56PT6-2AITInsignis Technology Corporation |
IC DRAM 512MBIT PAR 66TSOP II |
|
71V65603S150PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AS7C256A-15JINAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IS42SM16160K-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
