类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (SLC) |
内存大小: | 2Gb (256M x 8) |
内存接口: | Parallel |
时钟频率: | 40 MHz |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 63-VFBGA |
供应商设备包: | 63-VFBGA (9x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C25652KV18-400BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AS7C1024B-15TCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP |
|
24FC64-I/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8MSOP |
|
CY7C1303BV25-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY7C1363A-117AJCRochester Electronics |
STANDARD SRAM, 512KX18, 7.5NS |
|
CAT25020VI-GRochester Electronics |
IC EEPROM 2KBIT SPI 20MHZ 8SOIC |
|
BR24T02FVM-WGTRROHM Semiconductor |
IC EEPROM 2K I2C 400KHZ 8MSOP |
|
71V65703S85PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IS61NLP25636A-200B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 165TFBGA |
|
CY7C131-55NCTRochester Electronics |
DUAL-PORT SRAM, 1KX8 |
|
CY7C09389V-9AXCRochester Electronics |
IC SRAM 1.152MBIT PAR 100TQFP |
|
DS1330YP-100+Rochester Electronics |
NON-VOLATILE SRAM MODULE, 32KX8, |
|
IS45S32800J-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |