English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
| 供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS1230AB-70+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
CY14B101KA-SP45XICypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
SST25VF020-20-4I-QAE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 20MHZ 8WSON |
|
IS25WP064A-JMLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
CY7C1360A-166ACRochester Electronics |
CACHE SRAM, 256KX36, 3.5NS |
|
71V016SA10PHGI8Rochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
CY7C25652KV18-500BZXIRochester Electronics |
QDR SRAM, 2MX36, 0.45NS PBGA165 |
|
24AA16T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C SOT23-5 |
|
S29GL032N11FFIS40Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
5962-8855204XARenesas Electronics America |
IC SRAM 256KBIT PAR 28CERDIP |
|
25AA640A-E/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8MSOP |
|
71V65803S133PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
SST39VF3202C-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
