类型 | 描述 |
---|---|
系列: | SST39 MPF™ |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10µs |
访问时间: | 70 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SFEM4096B1EA1TO-I-GE-111-E02Swissbit |
IC FLASH 16GBIT EMMC 153BGA |
|
HM1-6504B/883S2064Rochester Electronics |
4096 X 1 CMOS STATIC RAM |
|
MT53E128M32D2DS-053 WT:AMicron Technology |
IC DRAM 4GBIT 1.866GHZ 200WFBGA |
|
24FC08-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8TSSOP |
|
IS64LPS204818B-166TQLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
24FC04-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8SOIC |
|
CY7C1361B-100BGCTRochester Electronics |
SRAM 3.3V 9M-BIT 256K X 36 8.5NS |
|
S29GL064N90BFI030Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
CYD36S72V18-167BGXIRochester Electronics |
IC SRAM 36MBIT PARALLEL 484FBGA |
|
GVT71128D32T-5Rochester Electronics |
IC SRAM 4MBIT 100MHZ |
|
S25FS064SAGBHV020Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
SST25VF040B-50-4I-SAFRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8SOIC |
|
93C46BT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ SOT23-6 |