English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 2Gb (256M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 57.5 ns |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 60-TFBGA |
| 供应商设备包: | 60-FBGA (8x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61LV5128AL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1472BV33-167AXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
CY7C1366A-200AJCRochester Electronics |
CACHE SRAM, 256KX36, 3NS |
|
MX66U1G45GXDI0AMacronix |
IC FLASH 1GBIT SPI/QUAD 24BGA |
|
71V65803S100BQGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
SMJ64C16S-70JDMRochester Electronics |
STANDARD SRAM, 16KX1 |
|
CAT24C256XE-T2Rochester Electronics |
IC EEPROM 256KBIT I2C 1MHZ 8SOIC |
|
CY7C128A-25SCRochester Electronics |
STANDARD SRAM, 2KX8, 25NS, CMOS |
|
MT53E256M32D2DS-053 AAT:B TRMicron Technology |
IC DRAM 8GBIT 1.866GHZ 200WFBGA |
|
GD25VQ16CEIGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8USON |
|
IS42RM32800K-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
SST39VF1602C-70-4I-B3KERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
IS42S32200L-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
