类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (256 x 16) |
内存接口: | 1-Wire® |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 2 µs |
电压 - 电源: | 2.8V ~ 5.25V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
供应商设备包: | TO-92-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC040-I/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |
|
RM25C32DS-LTAI-BAdesto Technologies |
IC CBRAM 32KBIT SPI 20MHZ 8TSSOP |
|
25AA010AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8DFN |
|
DS1249Y-100Rochester Electronics |
IC NVSRAM 2MBIT PARALLEL 32EDIP |
|
93C06/SN205Rochester Electronics |
256 BIT MICROWIRE SERIAL EEPROM |
|
S29GL256S90FHSS20Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
AT27LV020A-90TIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32TSOP |
|
IS46DR16320D-25DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
MT41K512M16HA-125:AAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
SST39SF010A-70-4I-NHERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
MT53E256M32D2DS-046 AIT:B TRMicron Technology |
IC DRAM 8GBIT 2.133GHZ 200WFBGA |
|
70T3339S133BCIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
S25FL256SDSBHB210Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |