类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS7C4098A-15JINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
CY62147G-45ZSXIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
23LCV512-I/SNRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/DUAL 8SOIC |
|
IS46R16320E-6BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
IS46DR16160B-25DBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
N24C02UVTGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT I2C 1MHZ US8 |
|
CY62157G30-45ZSXICypress Semiconductor |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
BR25010-10TU-2.7ROHM Semiconductor |
IC EEPROM 1KBIT SPI 3MHZ 8TSSOP |
|
71V65703S85BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
FT24C16A-USR-BFremont Micro Devices |
IC EEPROM 16KBIT I2C 1MHZ 8SOP |
|
UPD46185092BF1-E40-EQ1-ARochester Electronics |
QDR SRAM, 2MX9, 0.45NS |
|
AS7C31025B-15TJCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
6116LA20SOG8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |