类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 64Mb (2M x 32) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | 12ns |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 86-TFSOP (0.400", 10.16mm Width) |
供应商设备包: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAV24C08YE-GT3Rochester Electronics |
IC EEPROM 8KBIT I2C 8TSSOP |
|
SST39VF3201B-70-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
CY7C1361C-100AXECypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
BR24G02-3ROHM Semiconductor |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
S29GL512S10FAI023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
CY62148BLL-70ZXIRochester Electronics |
IC SRAM 4MBIT 70NS 32TSOP |
|
71V67703S80BQGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
IS43LR16800G-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 60TFBGA |
|
CY7C1565KV18-450BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
MT28EW512ABA1LJS-0SIT TRMicron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
AS4C8M16SA-7TCNAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 54TSOP II |
|
W948D2FBJX6EWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
CY7C1170V18-400BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |