English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile |
| 内存大小: | 128Mb (4M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.5 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-TFBGA |
| 供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1423AV18-267BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
34VL02/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
UPD44645362AF5-E40X-FQ1-ARochester Electronics |
STANDARD SRAM, 2MX36, 0.45NS |
|
NM25C040M8XRochester Electronics |
EEPROM, 512X8, SERIAL, CMOS |
|
UPD44164182BF5-E40X-EQ3-ARochester Electronics |
DDR SRAM, 1MX18, 0.45NS |
|
AT25DF081A-SH-TAdesto Technologies |
IC FLASH 8MBIT SPI 100MHZ 8SOIC |
|
MT41K512M8DA-107 AIT:PMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
AS4C16M16SA-6TANAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
CY14V104LA-BA25XICypress Semiconductor |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
R1LV5256ESA-5SI#B1Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
CAT24C05VP2I-GT3Rochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8TDFN |
|
24AA512T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIJ |
|
MTFC8GACAEDQ-K1 AIT TRMicron Technology |
IC FLASH 64GBIT MMC 100LBGA |
