类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 128Mb (4M x 32) |
内存接口: | Parallel |
时钟频率: | 143 MHz |
写周期时间 - 字,页: | 2ns |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DS1225AD-150+Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
CY7C1021CV33-15VIRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
24LC16BH-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TSSOP |
|
S29GL064N90FFI040ARochester Electronics |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
IS42SM16320E-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
S29GL01GS11FHSS63Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
CY7C1383BV25-117BGCRochester Electronics |
STANDARD SRAM, 1MX18 |
|
24LC024-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
SST26WF080B-104I/MFRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI/QUAD 8WDFN |
|
71V3558S166PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
DS1225Y-170Rochester Electronics |
DS1225 64K NONVOLATILE SRAM |
|
IS43LR32160B-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
SST39SF010A-55-4C-NHERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |