English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 10 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1380D-167BZCTRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CAT24C08LI-GRochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8DIP |
|
FM24CL16B-DGTRCypress Semiconductor |
IC FRAM 16KBIT I2C 1MHZ 8TDFN |
|
MX68GL1G0FLXFI-11GMacronix |
IC FLASH 1GBIT PARALLEL 64LFBGA |
|
CY7C1350G-200AXCTCypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS43DR86400C-25DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
IS65C256AL-25TLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PAR 28TSOP I |
|
DS1250AB-70+Maxim Integrated |
IC NVSRAM 4MBIT PARALLEL 32EDIP |
|
CY7C1360S-200BGCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
DS1245WP-100+Maxim Integrated |
IC NVSRAM 1MBIT PAR 34PWRCAP |
|
S25FL512SAGMFMG13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
NDS66PT5-16ETInsignis Technology Corporation |
IC DRAM 64MBIT PAR 54TSOP II |
|
AT28HC256E-70JU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
