类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128b (16 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 4ms |
访问时间: | 3500 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1313KV18-333BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
25LC160B-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |
|
SST39VF6401B-70-4I-B1KERoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
70V261S35PFG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
S29GL01GS10FAI020Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
NM93C46ALM8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
IS43DR82560C-25DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
IS61QDB22M36A-333B4LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
THGBMJG7C2LBAU8Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 16GBIT EMMC 153FBGA |
|
MB85RC16VPNF-G-JNN1ERE1Fujitsu Electronics America, Inc. |
IC FRAM 16KBIT I2C 1MHZ 8SOP |
|
IS63WV1024BLL-12HLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32STSOP I |
|
R1LV0816ASB-7SI#B0Rochester Electronics |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
S29GL256S11DHIV10Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |