类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-SOIC (0.342", 8.69mm Width) |
供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL256N11FFI020Rochester Electronics |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
71V35761SA166BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS42VM16160K-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
AT24C512BY7-YH-TRochester Electronics |
IC EEPROM 512KBIT I2C 1MHZ 8UDFN |
|
MT53D512M32D2DS-053 WT:DMicron Technology |
IC DRAM 16GBIT 1866MHZ 200WFBGA |
|
SST26VF016BT-104V/MFRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WDFN |
|
24C01CT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 100KHZ 8MSOP |
|
CAT28F020HI-90Rochester Electronics |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
MT46H16M32LFBQ-5 AAT:CMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
SST39VF800A-70-4I-B3KERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
041811CLAB-5Rochester Electronics |
256KX18 SRAM |
|
GS8182T19BGD-400IGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |
|
BR24L08FVJ-WE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOP |