English
简体中文
RES ARRAY 4 RES 120 OHM 1206
FIXED IND 1UH 18A 3.3 MOHM SMD
IC EEPROM 2KBIT SPI 2MHZ 8SOIC
DIODE SCHOTTKY 100V 1.5A DO214AA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8, 128 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL128S10FHI020ARochester Electronics |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
71V124SA12PHG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
CY62256LL-70ZXCTRochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
W25X40CLZPIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8WSON |
|
IS42S32160D-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
IS45S16100H-7BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
70V3579S4BF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
IS43R16160D-5TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
IS61LPS102418B-200B3LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AS4C8M16D1-5BCNTRAlliance Memory, Inc. |
IC DRAM 128MBIT PARALLEL 60TFBGA |
|
IS43R86400E-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
GS8182T36BGD-300IGSI Technology |
IC SRAM 18MBIT PARALLEL 165FPBGA |
|
CY7C12631KV18-400BZIRochester Electronics |
QDR SRAM, 2MX18, 0.45NS PBGA165 |