类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V7519S166BFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
IS45S16320F-7BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
71V67603S133PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CAT93C46RVI-GT3Rochester Electronics |
IC EEPROM 1KBIT SPI 4MHZ 8SOIC |
|
93LC66BT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DFN |
|
IS62WV2568BLL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 32TSOP I |
|
BR25H256FJ-2ACE2ROHM Semiconductor |
IC EEPROM 256KBIT SPI 8SOPJ |
|
S25FS512SAGNFB010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
FM25C640ULENRochester Electronics |
EEPROM, 8KX8, SERIAL PDIP8 |
|
71V65703S75BQRochester Electronics |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
25LC160B-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |
|
SM662GEA BDS ST617Silicon Motion |
FERRI EMMC 5GB 3D TLC + EXT. TEM |
|
GD25LT256EBIRYGigaDevice |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |