类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | 667 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA640A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |
|
71V3557S80BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
W632GU8NB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
DS2431G+UMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE 2SFN |
|
GD25LQ80CTIGGigaDevice |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
M48Z58-70PC1STMicroelectronics |
IC NVSRAM 64KBIT PAR 28PCDIP |
|
24LC128T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TDFN |
|
W949D6DBHX5I TRWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 60VFBGA |
|
S29GL128N11TFVR10Rochester Electronics |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
71124S12YGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
71P74604S250BQRochester Electronics |
18MBIT PIPELINED QDRII SRAM |
|
CY14B104K-ZS45XITCypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
S29GL064S70TFI073Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |