类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 5ms |
访问时间: | 150 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS49NLS93200-33WBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144TWBGA |
|
24AA025UIDT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C SOT23-6 |
|
MT46V128M4FN-5B:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
CY7C1426KV18-300BZXCRochester Electronics |
QDR SRAM, 4MX9, 0.45NS PBGA165 |
|
CY7C1399BN-15VXARochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
CY14B101KA-SP25XITCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
IS62WV10248EBLL-45TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
SST26WF080BAT-104I/NPRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI/QUAD 8USON |
|
AT25XV041B-MHV-YAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8UDFN |
|
CY62147GE30-45BVXIRochester Electronics |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
CY14B108L-BA45XITCypress Semiconductor |
IC NVSRAM 8MBIT PARALLEL 48FBGA |
|
BR25G320FVT-3GE2ROHM Semiconductor |
IC EEPROM 32KBIT SPI 8TSSOPB |
|
AT93C66A-10SQ-2.7Rochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |