English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | TrayTray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 8Mb (1M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V67603S166BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
AT25160B-XHL-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
N04L63W1AT27IRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S29GL512S11FHIV20Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
93LC56C-I/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8TSSOP |
|
TC58NVG1S3HTA00Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
MT29F2T08EMHAFJ4-3T:A TRMicron Technology |
IC FLASH 2TB PARALLEL 132VBGA |
|
IS43TR16256A-15HBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
CY7C1061G18-15ZXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
FT24C04A-KTG-TFremont Micro Devices |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
W987D6HBGX6EWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
24VL024H/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
CY7C1041CV33-12ZCTRochester Electronics |
STANDARD SRAM, 256KX16 |
