English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 8Kb (256 x 8 x 4) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | SC-74A, SOT-753 |
| 供应商设备包: | SOT-23-5 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93C46B/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
CY7C1512KV18-250BZXITCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
71V65803S150BG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
70V9369L9PFGRenesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
CY7C1372D-167BGCRochester Electronics |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
IS43DR16640B-25DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
AS4C128M16D3LC-12BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT 800MHZ 96FBGA |
|
70T653MS12BCRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
AS4C16M32SC-7TINTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 86TSOP II |
|
25LC020A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8MSOP |
|
HN58C256AT85ERochester Electronics |
256K EEPROM (32KWORD X 8-BIT) |
|
CY7C1643KV18-450BZICypress Semiconductor |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
CY7C1412KV18-300BZXCCypress Semiconductor |
NO WARRANTY |
