类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (256 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 2ms |
访问时间: | - |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY14B101LA-SP45XITCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
S27KS0641DPBHV023Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
|
24VL014HT/MNYRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8TDFN |
|
S34ML01G204TFA010Rochester Electronics |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
71V3558SA166BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS49RL36160-107EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
CAT24C21LIRochester Electronics |
CAT24C21 - 1 KBIT DUAL MODE SERI |
|
CY7C1308SV25C-167BZXCRochester Electronics |
IC SRAM 9MBIT 167MHZ 165FBGA |
|
S-25A256B0A-J8T2U3ABLIC U.S.A. Inc. |
IC EEPROM 256KBIT SPI 5MHZ 8SOPJ |
|
S29AL008J55TFNR20Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48TSOP I |
|
AS6C3216A-55TINAlliance Memory, Inc. |
IC SRAM 32MBIT PARALLEL 48TSOP I |
|
70V9089L12PFGI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
71V67803S133BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |