English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 63-VFBGA |
| 供应商设备包: | 63-VFBGA (9x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SST39WF1601-70-4I-B3KERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
71V35761SA166BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S-93C56BD0I-T8T1GABLIC U.S.A. Inc. |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
CY7C1370CV25-167ACRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY62146G-45ZSXIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT47H128M16RT-25E:CMicron Technology |
IC DRAM 2GBIT PARALLEL 84FBGA |
|
QS70261A-17TFRochester Electronics |
IC SRAM 256KBIT 58MHZ |
|
93C86AT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI SOT23-6 |
|
X28HC256J-15C7960Rochester Electronics |
EEPROM, 32KX8, 5V, PARALLEL |
|
BR9020RFV-WE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 2MHZ 8SSOPB |
|
MT46V16M16CY-5B IT:M TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
CY7C1250V18-333BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS4C64M16D1A-6TINTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 66TSOP II |
