English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR2-S4 |
| 内存大小: | 256Mb (16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | - |
| 电压 - 电源: | 1.14V ~ 1.3V, 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 134-TFBGA |
| 供应商设备包: | 134-TFBGA (10x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY27C256-150JCRochester Electronics |
OTP ROM, 32KX8, 150NS PQCC32 |
|
AS7C31025B-10TJCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
MT48LC64M8A2TG-75:CAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
BR93G56FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 3MHZ 8SOPJ |
|
MT55L256L18F1F-10Rochester Electronics |
ZBT SRAM, 256KX18, 7.5NS PBGA165 |
|
SST38VF6404-90-5C-EKERoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
71V35761SA183BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS43LR16160G-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
DS2045AB-70#Rochester Electronics |
IC NVSRAM 1MBIT PARALLEL 256BGA |
|
CY7C1380KV33-167BZITCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
FT93C46A-UTR-BFremont Micro Devices |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
CY7C1387BV25-167BGCRochester Electronics |
CACHE SRAM, 1MX18, 3.4NS |
|
6116SA25SOGI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
