类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT24C16WIRochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
CY7C1415KV18-333BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
BR93LC46F-WE2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 1MHZ 8SOIC |
|
S25FL256LDPMFN000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
MX25V1606FM2I03Macronix |
IC FLASH 16MBIT SPI/DUAL 8SOP |
|
AS7C316096C-10TINTRAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 44TSOP2 |
|
MT48LC64M8A2TG-75:IT:CAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
71V016SA12PHGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
CY7C1381B-100BZIRochester Electronics |
STANDARD SRAM, 512KX36, 8.5NS |
|
70T659S10BFIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
93C46CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8MSOP |
|
ACE1202EM8Rochester Electronics |
8-BIT, EEPROM, ACE1202 CPU, 1MHZ |
|
25LC320T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 2MHZ 8SOIC |