类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (512 x 16) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DS1245W-100Rochester Electronics |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
S29AL016J70BFA023Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
CY7C1020DV33-10ZSXICypress Semiconductor |
IC SRAM 512KBIT PAR 44TSOP II |
|
S34ML04G104BHV010Flip Electronics |
IC FLASH 4GBIT PARALLEL 63BGA |
|
CAT1023WI-25-T3Rochester Electronics |
CAT1023 - SUPERVISORY CIRCUIT WI |
|
S29GL256S11FHIV10Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
71V424L15YGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
IS49NLC36800-25WBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144TWBGA |
|
IS43LD16128B-18BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 134TFBGA |
|
SST39VF020-70-4I-WHERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
AT25SL321-MHE-TAdesto Technologies |
IC FLASH 32MBIT SPI/QUAD 8UDFN |
|
CY7C0831V-133ACRochester Electronics |
DUAL-PORT SRAM, 128KX18 |
|
IS43DR16640C-25DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |