类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 2Mb (128K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1345G-100AXIRochester Electronics |
CACHE SRAM, 128KX36, 8NS PQFP100 |
|
71V3577S65PFGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1371DV33-133BZIRochester Electronics |
ZBT SRAM, 512KX36, 6.5NS PBGA165 |
|
CY7C1049B-25VCRochester Electronics |
STANDARD SRAM, 512KX8, 25NS |
|
24LC16B-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TSSOP |
|
IS43LR16800G-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 60TFBGA |
|
MX25L3233FM1I-08GMacronix |
IC FLASH 32MBIT SPI/QUAD 8SOP |
|
MT58L64L32FT-10TRRochester Electronics |
CACHE SRAM, 64KX32, 10NS |
|
M24256-BWMN6PSTMicroelectronics |
IC EEPROM 256KBIT I2C 1MHZ 8SO |
|
MX25U12832FZNJ02Macronix |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
M24M01-RMN6TPSTMicroelectronics |
IC EEPROM 1MBIT I2C 1MHZ 8SO |
|
CY7C1021V33-15VITRochester Electronics |
STANDARD SRAM, 64KX16, 15NS |
|
X28HC64J-90Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 32PLCC |