类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 10ms |
访问时间: | 900 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S29GL032N11FFIV20ARochester Electronics |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
MT48LC64M8A2P-75:C TRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
AT93C56A-10SQ-2.7Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
IS43TR16512B-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96TWBGA |
|
CY7C1525KV18-250BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C1484BV33-250BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS61WV5128BLL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
SST26VF016B-104I/MFRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WDFN |
|
BR93A66RFVT-WME2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOPB |
|
W25Q128JVEIQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
MX25L12872FZNI-10GMacronix |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
MT46H32M16LFBF-5 IT:CMicron Technology |
IC DRAM 512MBIT PARALLEL 60VFBGA |
|
MX25L1606EMI-12GMacronix |
IC FLASH 16MBIT SPI 86MHZ 16SOP |