类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 72Mb (2M x 36) |
内存接口: | Parallel |
时钟频率: | 300 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24CS08-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8SOIC |
|
FM24C03UFM8Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SO |
|
24FC16T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
|
BR93G86NUX-3BTTRROHM Semiconductor |
IC EEPROM 16K SPI VSON008X2030 |
|
S29GL256S10DHSS10Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
CY27C010-120WIRochester Electronics |
UVPROM, 128KX8, 120NS CDIP32 |
|
M95640-DRDW8TP/KSTMicroelectronics |
IC EEPROM 64KBIT SPI 8TSSOP |
|
IS42S16320F-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
CY7C1245KV18-400BZXIRochester Electronics |
QDR SRAM, 1MX36, 0.45NS PBGA165 |
|
AT25DF641A-MH-YAdesto Technologies |
IC FLASH 64MBIT SPI 100MHZ 8UDFN |
|
70T631S10BCIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
BR24G16FVM-3GTTRROHM Semiconductor |
IC EEPROM 16KBIT I2C 8MSOP |
|
IS42S16100H-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |