类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (1M x 1) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
043641QLAD-4Rochester Electronics |
256KX18 SRAM |
|
71V65603S133BQGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
NM93C46AEM8XRochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
AT28HC256-70TU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
25LC512-E/MFRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 20MHZ 8DFN |
|
CY7C1420BV18-250BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AS4C128M8D1-6TINTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 66TSOP II |
|
AT27C020-90JU-TRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
CY62127DV30LL-70ZITRochester Electronics |
SRAM CHIP ASYNC SINGLE 2.5V/3.3V |
|
R1LP0408DSP-7SR#B0Rochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
70V7319S166BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
93LC56B-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
24AA04HT-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 8TSSOP |