类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1370KVE33-167AXMCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
S25FL256SAGMFV001Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
W25M02GWZEIGWinbond Electronics Corporation |
IC FLASH 2GBIT SPI/QUAD 8WSON |
|
S29GL256S90DHSS20Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
GS8322Z36AGD-333IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
CY15B102QN-50SXECypress Semiconductor |
IC FRAM 2MBIT SPI 50MHZ 8SOIC |
|
25LC640A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8MSOP |
|
IS42SM32160E-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
CY7C09579V-100ACRochester Electronics |
IC SRAM 1.152MBIT PAR 144TQFP |
|
MB85RS4MTPF-G-JNERE2Fujitsu Electronics America, Inc. |
IC FRAM 4MBIT SPI 40MHZ 8SOP |
|
M5M5256DVP-70G#SERochester Electronics |
STANDARD SRAM, 32KX8 |
|
AS7C34098B-10BINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
93C66CT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8MSOP |