类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 32Kb (4K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT45DQ161-MHF-TAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 8UDFN |
|
CY7B144-25JCRochester Electronics |
DUAL-PORT SRAM, 8KX8, 25NS, |
|
MT40A256M16LY-062E IT:FMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MTFC8GAKAJCN-4M IT TRMicron Technology |
IC FLASH 64GBIT MMC 153VFBGA |
|
W94AD2KBJX5EWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 90VFBGA |
|
AS6C8016-55ZINTRAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
SST25VF020-20-4C-QAERoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 20MHZ 8WSON |
|
SST39WF800B-70-4I-B3KERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
CY7C1313KV18-250BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY7C1911KV18-250BZCRochester Electronics |
QDR SRAM, 2MX9, 0.45NS, CMOS, PB |
|
W9725G8KB25I TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60WBGA |
|
R1LV0408DSA-7LR#B0Rochester Electronics |
IC SRAM 4MBIT PARALLEL 32STSOP |
|
IS62WV20488EBLL-45BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |