类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 16Mb (512K x 32) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1383D-133AXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
S25FL256LDPNFV013Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
7132SA100CRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
CY7C1061G-10BV1XICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
AS6C62256-55STINTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28STSOP |
|
AT25SF161B-MHB-TAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 8UDFN |
|
CAT24C08YGIRochester Electronics |
IC EEPROM 8KBIT I2C 8TSSOP |
|
71V35761SA183BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AS4C512M16D3LB-12BINAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
S29GL064S80BHV040Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
CY62167GN-45ZXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
MSM5117405F-60T-DKXROHM Semiconductor |
IC DRAM 16M PARALLEL 26TSOP |
|
CAT24WC02WIRochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |