类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX25V1606FM1I03Macronix |
IC FLASH 16MBIT SPI/DUAL 8SOP |
|
IS61WV5128BLL-10BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
CY7C1061GE30-10BV1XITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
CY7C1360A-200BGCRochester Electronics |
CACHE SRAM, 256KX36, 3NS |
|
M24256-DRMN8TP/KSTMicroelectronics |
IC EEPROM 256KBIT I2C 1MHZ 8SO |
|
IS43TR16256BL-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
MT41K128M16JT-107 IT:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
S29GL01GS10TFA010Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
71V016SA12PHRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
MT25QU128ABA1ESE-0SIT TRMicron Technology |
IC FLASH 128MBIT SPI 133MHZ 8SO |
|
24LC64T-E/SMRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIJ |
|
71V016SA20YGIRochester Electronics |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
70V639S12BF8Renesas Electronics America |
IC SRAM 2.25MBIT PAR 208CABGA |