类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 896b (112 x 8) |
内存接口: | 1-Wire® |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 2 µs |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 6-LSOJ (0.148", 3.76mm Width) |
供应商设备包: | 6-TSOC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GT28F320C3TA100SB93 |
IC FLASH 32MBIT PAR 48UBGA CSP |
|
IS43R16160F-5BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
CAT25C16SIRochester Electronics |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
AT25SF081B-SHB-BAdesto Technologies |
IC FLASH 8MBIT SPI QUAD 8SOIC |
|
AT28LV010-20TU-630Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32TSOP |
|
S25FL256SAGMFAG00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
S34MS04G200BHI000Rochester Electronics |
IC FLASH 4GBIT PARALLEL 63BGA |
|
IS46TR16128D-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
CAT24C208WI-GRochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
CY14V256LA-BA35XICypress Semiconductor |
IC NVSRAM 256KBIT PAR 48FBGA |
|
R1QEA7236ABB-20IB0Rochester Electronics |
STANDARD SRAM, 2MX36, 0.45NS |
|
IS43TR81280B-107MBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
04364ARLAC-6PRochester Electronics |
4MB (128KB X 36) SRAM |