English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256b (16 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 2ms |
| 访问时间: | - |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C11701KV18-400BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
7164S70DBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CERDIP |
|
71V65803S133PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1380BV25-200ACRochester Electronics |
CACHE SRAM, 512KX36, 3NS |
|
W979H6KBVX2EWinbond Electronics Corporation |
IC DRAM 512MBIT PAR 134VFBGA |
|
R1LP5256ESP-5SR#S0Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOP |
|
7132LA20JGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
MT58L128L36P1T-7.5ITRochester Electronics |
CACHE SRAM, 128KX36, 4NS PQFP100 |
|
25LC040A-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8MSOP |
|
CY7C2568KV18-400BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
DS1230Y-70IND+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
AT25020A-10TQ-2.7Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
CY62167EV30LL-45ZXATCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
