类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 128Kb (8K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S27KL0641DABHI023Cypress Semiconductor |
IC PSRAM 64MBIT PARALLEL 24FBGA |
|
IS43R16160F-5BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
11LC161T-E/TTRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE SOT23 |
|
S25FL064LABMFI010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
W25Q80EWZPIG TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8WSON |
|
93C56AT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DFN |
|
IS42S16160J-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
71V35761SA183BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1514V18-250BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY14B108L-BA25XITCypress Semiconductor |
IC NVSRAM 8MBIT PARALLEL 48FBGA |
|
CG7599AACypress Semiconductor |
IC SRAM 18MBIT PAR 165FBGA |
|
24LC65-I/PRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 8DIP |
|
93C76T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 2MHZ 8SOIC |