English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 400 ns |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SST25VF016B-50-4C-S2AF-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 50MHZ 8SOIC |
|
71V3557S85PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS46DR16128C-3DBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
24C02CT/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
CY7C1625KV18-250BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
AS4C4M16SA-7TCNAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 54TSOP II |
|
MT25QU256ABA8E12-1SIT TRMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
AT28C256-15JURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
RM24C32DS-LSNI-TAdesto Technologies |
IC CBRAM 32KBIT I2C 1MHZ 8SOIC |
|
S29GL128P10FFIS10ARochester Electronics |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
71V416L15BERenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
AS7C256A-20TCNTRAlliance Memory, Inc. |
IC SRAM 256KBIT PAR 28TSOP I |
|
CAT28LV64GI20Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 32PLCC |
