类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128Kb (16K x 8) |
内存接口: | I²C |
时钟频率: | 100 kHz |
写周期时间 - 字,页: | 6ms |
访问时间: | 3.5 µs |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-DIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS65C256AL-25ULA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PARALLEL 28SOP |
|
24LC256T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8MSOP |
|
71V3558S166PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
S25FS064SAGBHN020Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24FBGA |
|
CY14B101KA-SP25XICypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
93C56AT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8MSOP |
|
IS61LF25618EC-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100LQFP |
|
71T75702S85BGIRochester Electronics |
512K X 36 SYNCHRONOUS ZBT SRAM |
|
IS21ES04G-JCLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32GBIT EMMC 153VFBGA |
|
70V631S10BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
CY7C1346H-166AXCRochester Electronics |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
NM93C46LNRochester Electronics |
IC EEPROM 1KBIT SPI 250KHZ 8DIP |
|
71V65903S85BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |