类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 450 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TWBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S26KS256SDGBHN030Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
S25FL256LAGNFN010Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
CY7C1313TV18-167BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY7C1250KV18-400BZXCCypress Semiconductor |
NO WARRANTY |
|
CY7C1061G-10BV1XITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
93AA66BT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
71T75802S100PFI8Rochester Electronics |
1M X 18, SYNCHRONOUS ZBT SRAM |
|
GD25WD40CTIGRGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
S25FS064SDSMFB010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
043641RLAD-7Rochester Electronics |
256KX18 SRAM |
|
MT25QL512ABB1EW9-0SIT TRMicron Technology |
IC FLASH 512MBIT SPI 8WPDFN |
|
MX25U1635FZBI-10GMacronix |
IC FLASH 16MBIT SPI/QUAD 8USON |
|
S25FL256LAGBHI030Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |