类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 12Gb (384M x 32) |
内存接口: | - |
时钟频率: | 1.866 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 200-WFBGA |
供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GD25S512MDFIGRGigaDevice |
IC FLASH 512MBIT SPI/QUAD 16SOP |
|
S26KS128SDABHV030Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 24FBGA |
|
93C66T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
GS81313LD36GK-625IGSI Technology |
IC SRAM 144MBIT PARALLEL 260BGA |
|
R1LP0108ESA-7SI#B0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
IS43R32800D-5BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 144LFBGA |
|
BR24T08F-WE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8SOP |
|
IS46TR16128C-125KBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
MT58L128L32F1T-6.8Rochester Electronics |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
71V3576S133BGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S26KS512SDGBHN030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
70V3579S6BC8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
CY62138CV33LL-70BAIRochester Electronics |
STANDARD SRAM, 256KX8, 70NS |